MRF8S7170NR3【PDF 1/13 页】FET RF N-CH 700MHZ 28V OM780-2

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MRF8S7170NR3

RF Device Data

Freescale Semiconductor, Inc.

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed for base station applications with frequencies from 618 to

803 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

Typical Single--Carrier W--CDMA Performance: VDD

=28Volts,IDQ

1200 mA, Pout

= 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth =

3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Frequency

(1)

Gps

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

728 MHz

19.7

37.1

6.2

--38.7

748 MHz

19.5

37.0

6.1

--37.5

768 MHz

19.4

37.9

6.1

--37.8

Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 170 Watts CW Output

Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced

Ruggedness

Typical Pout

@ 1 dB Compression Point

182 Watts CW

Features

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage

Range for Improved Class C Operation

Designed for Digital Predistortion Error Correction Systems

225?C Capable Plastic Package

In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13--inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +70

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

--65 to +150

Case Operating Temperature

150

Operating Junction Temperature

(2,3)

225

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(3,4)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80?C, 170 W CW, 28 Vdc, IDQ

= 1200 mA

Case Temperature 81?C, 50 W CW, 28 Vdc, IDQ

= 1200 mA

R?JC

0.30

0.37

?C/W

1. This part is not recommended for Doherty applications across the 600 to 728 MHz band.

2. Continuous use at maximum temperature will affect MTTF.

3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

4. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF8S7170N

Rev. 2, 2/2014

Freescale Semiconductor

Technical Data

618--803 MHz, 50 W AVG., 28 V

SINGLE W--CDMA

LATERAL N--CHANNEL

RF POWER MOSFET

OM--780--2L

PLASTIC

MRF8S7170NR3

Freescale Semiconductor, Inc., 2010, 2014.

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